IndiumV3, Main, Repository, bibRecord, 002918

Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

Identifieur interne : 002918 ( Main/Repository ); précédent : 002917; suivant : 002919

Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

Auteurs : RBID : Pascal:11-0396806

Descripteurs français

Pascal (Inist)
- Mémoire non volatile, Caractéristique électrique, Structure sandwich, Addition étain, Condensateur, Dispositif à mémoire, Transport charge, Phénomène transport, Mémoire flash, Piégeage porteur charge, Effet tunnel Fowler Nordheim, Oxyde de zinc, Nanoparticule, Aluminium, Oxyde d'indium, Matériau revêtu, Verre, Circuit intégré, Matériau dopé, 8105K, 7363, ZnO, ITO.
Wicri :
- concept : Aluminium, Verre.

English descriptors

KwdEn :
- Aluminium, Capacitor, Charge carrier trapping, Charge transport, Coated material, Doped materials, Electrical characteristic, Flash memory, Fowler Nordheim tunneling, Glass, Indium oxide, Integrated circuit, Memory devices, Nanoparticle, Non volatile memory, Sandwich structure, Tin addition, Transport process, Zinc oxide.

Abstract

In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode.

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to stream Main, to step Corpus: 002A16

Links to Exploration step

Pascal:11-0396806

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer</title>
<author><name sortKey="Lee, W K" uniqKey="Lee W">W. K. Lee</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Multimedia University, Faculty of Engineering</s1>
<s2>Cyberjaya</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Malaisie</country>
<wicri:noRegion>Cyberjaya</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wong, H Y" uniqKey="Wong H">H. Y. Wong</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Multimedia University, Faculty of Engineering</s1>
<s2>Cyberjaya</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Malaisie</country>
<wicri:noRegion>Cyberjaya</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Aw, K C" uniqKey="Aw K">K. C. Aw</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The University of Auckland, Mechatronics Engineering, Department of Mechanical Engineering</s1>
<s3>NZL</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>The University of Auckland, Mechatronics Engineering, Department of Mechanical Engineering</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0396806</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0396806 INIST</idno>
<idno type="RBID">Pascal:11-0396806</idno>
<idno type="wicri:Area/Main/Corpus">002A16</idno>
<idno type="wicri:Area/Main/Repository">002918</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term>
<term>Capacitor</term>
<term>Charge carrier trapping</term>
<term>Charge transport</term>
<term>Coated material</term>
<term>Doped materials</term>
<term>Electrical characteristic</term>
<term>Flash memory</term>
<term>Fowler Nordheim tunneling</term>
<term>Glass</term>
<term>Indium oxide</term>
<term>Integrated circuit</term>
<term>Memory devices</term>
<term>Nanoparticle</term>
<term>Non volatile memory</term>
<term>Sandwich structure</term>
<term>Tin addition</term>
<term>Transport process</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mémoire non volatile</term>
<term>Caractéristique électrique</term>
<term>Structure sandwich</term>
<term>Addition étain</term>
<term>Condensateur</term>
<term>Dispositif à mémoire</term>
<term>Transport charge</term>
<term>Phénomène transport</term>
<term>Mémoire flash</term>
<term>Piégeage porteur charge</term>
<term>Effet tunnel Fowler Nordheim</term>
<term>Oxyde de zinc</term>
<term>Nanoparticule</term>
<term>Aluminium</term>
<term>Oxyde d'indium</term>
<term>Matériau revêtu</term>
<term>Verre</term>
<term>Circuit intégré</term>
<term>Matériau dopé</term>
<term>8105K</term>
<term>7363</term>
<term>ZnO</term>
<term>ITO</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term>
<term>Verre</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode.</div>
</front>
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<fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03>
<fA05><s2>88</s2>
</fA05>
<fA06><s2>9</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LEE (W. K.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WONG (H. Y.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>AW (K. C.)</s1>
</fA11>
<fA14 i1="01"><s1>Multimedia University, Faculty of Engineering</s1>
<s2>Cyberjaya</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>The University of Auckland, Mechatronics Engineering, Department of Mechanical Engineering</s1>
<s3>NZL</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>2837-2839</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
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</fA23>
<fA43 i1="01"><s1>INIST</s1>
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<s5>354000508974470020</s5>
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<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>13 ref.</s0>
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<fA47 i1="01" i2="1"><s0>11-0396806</s0>
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<fA60><s1>P</s1>
</fA60>
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</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this article the electrical characteristics of zinc oxide nanoparticles (ZnO NP) embedded in polymethylsilsesquioxane (PMSSQ) film have been studied. PMSSQ film with embedded ZnO NP was sandwiched between aluminium and ITO coated glass as a capacitor-based memory device. Charge transport mechanism in this device has been investigated. The device can be programmed and erased similar to a flash-memory. Programming the device causes the trapping of electrons transported from the aluminium into the ZnO NP via trapped-charge-limited current mechanism. The erasing of the memory device is via the Fowler-Nordheim tunneling of electrons in the opposition direction towards the aluminium electrode.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F06B</s0>
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</fC02>
<fC02 i1="04" i2="X"><s0>001D03F09</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Mémoire non volatile</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Non volatile memory</s0>
<s5>01</s5>
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<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>02</s5>
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<s5>03</s5>
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<fC03 i1="03" i2="X" l="ENG"><s0>Sandwich structure</s0>
<s5>03</s5>
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<fC03 i1="03" i2="X" l="SPA"><s0>Estructura sandwich</s0>
<s5>03</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Condensateur</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Capacitor</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Condensador</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Dispositif à mémoire</s0>
<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Memory devices</s0>
<s5>06</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Transport charge</s0>
<s5>07</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Charge transport</s0>
<s5>07</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Phénomène transport</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Transport process</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Fenómeno transporte</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Memoria flash</s0>
<s5>09</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Piégeage porteur charge</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Charge carrier trapping</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Captura portador carga</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Effet tunnel Fowler Nordheim</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Fowler Nordheim tunneling</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Efecto túnel Fowler Nordheim</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Nanoparticule</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Nanoparticle</s0>
<s5>23</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Nanopartícula</s0>
<s5>23</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>Aluminium</s0>
<s2>NC</s2>
<s2>FR</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Aluminium</s0>
<s2>NC</s2>
<s2>FR</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Aluminio</s0>
<s2>NC</s2>
<s2>FR</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Matériau revêtu</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Coated material</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Material revestido</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Verre</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Glass</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>27</s5>
</fC03>
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<s5>46</s5>
</fC03>
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<s5>46</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Circuito integrado</s0>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>8105K</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>7363</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé II-VI</s0>
<s5>12</s5>
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<fC07 i1="01" i2="X" l="ENG"><s0>II-VI compound</s0>
<s5>12</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto II-VI</s0>
<s5>12</s5>
</fC07>
<fN21><s1>269</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri